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| 2SC4908 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4908 900 800 7 3(Pulse6) 1.5 35(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose (Ta=25C) 2SC4908 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 40typ V V MHz pF 13.0min sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=0.7A IC=0.7A, IB=0.14A IC=0.7A, IB=0.14A VCE=12V, IE=-0.3A VCB=10V, f=1MHz External Dimensions FM20(TO220F) 4.00.2 10.10.2 4.20.2 2.8 c0.5 Unit A V 16.90.3 8.40.2 A 1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL () 357 IC (A) 0.7 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.1 IB2 (A) -0.35 ton (s) 1max tstg (s) 5max tf (s) 1max 2.54 3.9 BCE 0.2 0.80.2 a b o3.30.2 Weight : Approx 2.0g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) A 0m VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at)( V ) Base-Emitter Saturation Voltage V B E (s at)( V) 2 I C /IB=5 Const, I C - V BE Temperature Characteristics (Typical) 3 (VCE=4V) 3 50 400 mA 300m A Collector Current I C (A) 200m A Collector Current I C (A) 2 140mA 2 mp) mp) 25C (C ase Te IB=20mA V C E( sat) 0 0.03 0.05 0.1 0.5 1 5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0 1 2 3 4 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) (VCE=4V) 50 125C D C Cur r ent Gai n h F E 25C -30C 10 5 j-a(C/W) h FE - IC Characteristics (Typical) t on*t s t g *t f( s) t on *t stg * tf - I C Characteristics (Typical) 4 j-a - t Characteristics tstg VCC 250V I C: I B1: IB2=2:0.3:-1 1 tf 0.5 ton 0.2 0.1 0.5 1 3 Transient Thermal Resistance Swi tchi ng T im e 1 5 0.5 0.3 2 0.02 0.05 0.1 0.5 1 3 1 10 Time t(ms) 100 -30C (C 1 60mA 1 125C (Cas V B E( sat) ase Tem e Te 1 p) 1000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 10 10 Reverse Bias Safe Operating Area 35 P c - T a Derating 10 M aximum Power Dissipa ti on P C( W) 5 0 5 30 W ith Collector Curr ent I C ( A) s Collector Curr ent I C( A) In fin ite 20 he 1 1 Without Heatsink Natural Cooling L=3mH IB2=-1.0A Duty:less than 1% at si nk 0.5 Without Heatsink Natural Cooling 0.5 10 Without Heatsink 0.1 50 100 500 1000 0.1 50 100 500 1000 2 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 121 |
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